FDU8780

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 35 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 6.5 m Ohms


Features:

`Max r <sub>DS(on)</sub> = 8.5m at V<sub>GS</sub> = 10V, I<sub>D</sub> = 35A
`Max r _DS(on) = 12.0m at V_GS = 4.5V, I_D = 35A
`Low gate charge: Qg(10) = 21nC(Typ), V<sub>GS</sub> = 10V
`Low gate resistance
`Avalanche rated and 100% tested
`RoHS Compliant


Application

· Vcore DC-DC for Desktop Computers and Servers
· VRM for Intermediate Bus Architecture


Specifications

Symbol	Parameter	Ratings	Units
VDS	Drain to Source Voltage	25	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current -Continuous (Package Limited)	35	A
	-Continuous (Die Limited)	60
	-Pulsed                           (Note 1)	224
EAS	Single Pulse Avalanche Energy              (Note 2)	73	mJ
PD	Power Dissipation	50	W
TJ,TSTG	Operating and Storage Temperature	-55 to 175	°C

Description

This FDU8780 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r _DS(on) and fast switching speed.


Parameters:

Technical/Catalog Information	FDU8780
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	8.5 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	1440pF @ 13V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	29nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDU8780 FDU8780