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FDU6696

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00162546 Detail

FDU6696: MOSFET 30V N-Ch PowerTrench

FDU6696 Data Sheet

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Part Number:
FDU6696
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

· 50A, 30 V RDS(ON) = 8.0 mW @ VGS = 10 V RDS(ON) = 10.7 mW @ VGS = 4.5 V
· Low gate charge (17nC typical)
· Fast switching
· High performance trench technology for extremely low RDS(ON)


Application

· DC/DC converter
· Motor drives


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
± 16
50
13
100
52
3.8
1.6
55 to +175
V
ID
 Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed

(Note 3)
(Note 1a)
(Note 1a)
A
PD
 Power Dissipation @TC=25°C
@TA=25°C
@TA=25°C
(Note 1a)
(Note 1b)
(Note 1c)
W
TJ, TSTG
 Operating and Storage Temperature Range
°C



Description

This FDU6696 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.




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