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FDU6692

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00159527 Detail

FDU6692: MOSFET 30V N-Ch PowerTrench

FDU6692 Data Sheet

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Part Number:
FDU6692
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 54 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 54 A
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.012 Ohms


Features:

• 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V
• Low gate charge (18 nC typical)
• Fast switching
• High performance trench technology for extremely low RDS(ON)


Application

• DC/DC converter
• Motor drives


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±16
54
162
57
3.8
1.6
-55 to +175
V
V
ID
 Drain Current Continuous
Pulsed

(Note 3)
(Note 1a)
A
PD
 Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
W
TJ, TSTG
 Operating and Storage Temperature Range
°C



Description

This FDU6692 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.




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