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FDU6680

MOSFET 30V N-Channel PowerTrench

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FDU6680: MOSFET 30V N-Channel PowerTrench

FDU6680 Data Sheet

floor Price/Ceiling Price

US $ .28~.56 / Piece | Get Latest Price
Part Number:
FDU6680
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.56
  • $.47
  • $.37
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 46 A
Resistance Drain-Source RDS (on) : 0.01 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 46 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.01 Ohms


Features:

· 46 A, 30 V RDS(ON) = 10 mW @ VGS = 10 V RDS(ON) = 15 mW @ VGS = 4.5 V
· Low gate charge
· Fast Switching Speed
· High performance trench technology for extremely low RDS(ON)


Application

· DC/DC converter
· Motor Drives


Specifications

Symbol
Parameter
NDS9936
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
30
±20
46
12
100
56
3.3
1.5
55 to +175
V
V
A


W


°C
ID
 Continuous Drain Current @TC=25°C
@TA=25°C
Pulsed		 (Note 3)
(Note 1a)
(Note 1a)
PD
 Power Dissipation @TC=25°C
@TA=25°C
@TA=25°C		 (Note 3)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDU6680 N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDU6680
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs10 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 1230pF @ 15V
Power - Max1.5W
PackagingTube
Gate Charge (Qg) @ Vgs18nC @ 5V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDU6680
FDU6680



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