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FDU6644

MOSFET 30V N-Ch PowerTrench

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SeekIC No. : 00166378 Detail

FDU6644: MOSFET 30V N-Ch PowerTrench

FDU6644 Data Sheet

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Part Number:
FDU6644
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 67 A
Resistance Drain-Source RDS (on) : 8.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 67 A
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 8.5 m Ohms


Features:

 67 A, 30 V.  RDS(ON)  = 8.5 m @ VGS = 10 V 
                       RDS(ON)  = 10.5 m @ VGS = 4.5 V
High performance trench technology for extremely 
   low RDS(ON)  
  Low gate charge (25 nC typical) 
High power and current handling capability


Application

DC/DC converter


Pinout

Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID

Drain Current Continuous (Note 3)

                      Pulsed       (Note 1a)

67 A
100
PD Power Dissipation for Single Operation (Note 1)
                                                            (Note 1a) 
                                                            (Note 1b) 		68 W
3.8
1.6
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +175 °C



Description

This FDU6644 N-Channel MOSFET has been designed  specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional  switching PWM controllers.  It has been optimized for low gate charge, low RDS(ON) and fast switching speed.




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