FDS9945

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:

·  3.5 A, 60 V. RDS(ON) = 0.100W @ VGS = 10 V
                        RDS(ON) = 0.200W @ VGS = 4.5V
·  Optimized for use in switching DC/DC converters with PWM controllers
·  Very fast switching
·  Low gate charge


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	60	V
VGSS	Gate-Source Voltage	+20	V
ID	Draint Current - Continuous (Note 1)	3.5	A
	- Pulsed	10
PD	Maximum Power Dissipation (Note 1a)	2	W
	(Note 1b)	1.6
	(Note 1c)	1.0
TJ, TSTG	Operating and Storage Junction Temperature Range	55 to +175	°C

Description

These FDS9945 N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

The MOSFET FDS9945 feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications.

The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Parameters:

Technical/Catalog Information	FDS9945
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	100 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	420pF @ 30V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	13nC @ 5V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS9945 FDS9945 FDS9945DKR ND FDS9945DKRND FDS9945DKR