FDS9934C

MOSFET 20V Complementary PowerTrench

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SeekIC No. : 00147360 Detail

FDS9934C: MOSFET 20V Complementary PowerTrench

floor Price/Ceiling Price

US $ .24~.43 / Piece | Get Latest Price
Part Number:
FDS9934C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.43
  • $.36
  • $.3
  • $.24
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/30

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 10 V, +/- 12 V Continuous Drain Current : 6.5 A, - 5 A
Resistance Drain-Source RDS (on) : 0.025 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Resistance Drain-Source RDS (on) : 0.025 Ohms
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 10 V, +/- 12 V
Continuous Drain Current : 6.5 A, - 5 A


Features:

` Q1: 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V
                            RDS(ON) = 43 m @ VGS = 2.5 V.
` Q2: 5 A, 20 V,RDS(ON) = 55 m @ VGS = 4.5 V
                            RDS(ON) = 90 m @ VGS = 2.5 V



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Ratings
Units
Q1
Q2
VDSS Drain-Source Voltage
20
-20
V
VGSS Gate-Source Voltage
±10
±12
ID
Drain Current
Continuous (Note 1a)
Pulsed
6.5
-5
A
20
-30
PD

Power Dissipation for Dual Operation

2
W
Power Dissipation for Single Operation

(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG Operating and Storage Junction Temperature Range
55 to +150
°C



Description

These dual N- and P-Channel enhancement mode power field effect transistors FDS9934C are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices FDS9934C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDS9934C
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C6.5A, 5A
Rds On (Max) @ Id, Vgs30 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds 650pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9nC @ 4.5V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDS9934C
FDS9934C



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