MOSFET 20V Complementary PowerTrench
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 20 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V, +/- 12 V | Continuous Drain Current : | 6.5 A, - 5 A | ||
Resistance Drain-Source RDS (on) : | 0.025 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter |
Ratings
|
Units | ||
Q1 |
Q2 | ||||
VDSS | Drain-Source Voltage |
20 |
-20 |
V | |
VGSS | Gate-Source Voltage |
±10 |
±12 | ||
ID |
Drain Current |
Continuous (Note 1a) Pulsed |
6.5 |
-5 |
A |
20 |
-30 | ||||
PD |
Power Dissipation for Dual Operation |
2 |
W | ||
Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
1.6 | |||
1 | |||||
0.9 | |||||
TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
These dual N- and P-Channel enhancement mode power field effect transistors FDS9934C are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices FDS9934C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical/Catalog Information | FDS9934C |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6.5A, 5A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 6.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 650pF @ 10V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
Package / Case | SO-8 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS9934C FDS9934C |