MOSFET SO-8 DUAL P-CH -20V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.8 A | ||
Resistance Drain-Source RDS (on) : | 0.075 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol | Parameter |
Ratings |
Units | |
VDSS | Drain-Source Voltage |
-20 |
V | |
VGSS | Gate-Source Voltage |
±8 | ||
ID |
Drain Current |
Continuous (Note 1a) Pulsed |
-3.8 |
A |
-20 | ||||
PD |
Power Dissipation for Dual Operation |
2 |
W | |
Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
1 | ||||
0.9 | ||||
TJ, TSTG | Operating and Storage Junction Temperature Range |
55 to +150 |
°C |
These FDS9933A P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Technical/Catalog Information | FDS9933A |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.8A |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 3.8A, 4.5V |
Input Capacitance (Ciss) @ Vds | 600pF @ 10V |
Power - Max | 2W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
Package / Case | SO-8 |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDS9933A FDS9933A FDS9933ADKR ND FDS9933ADKRND FDS9933ADKR |