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FDD5810

MOSFET LOW_VOLTAGE

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SeekIC No. : 00160851 Detail

FDD5810: MOSFET LOW_VOLTAGE

FDD5810 Data Sheet

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Part Number:
FDD5810
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 16.5 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 35 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 16.5 m Ohms


Parameters:

Technical/Catalog InformationFDD5810
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C37A
Rds On (Max) @ Id, Vgs22 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds 1890pF @ 25V
Power - Max72W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD5810
FDD5810
FDD5810TR ND
FDD5810TRND
FDD5810TR



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