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FDD5202P

Features: • -8 A, -60 V. RDS(on) = 0.3 W @ VGS = -10 V RDS(on) = 0.5 W @ VGS = -4.5 V.• Low gate charge (15.5nC typical).• Fast switching speed.Application• DC/DC converter• Motor drives• L.D.O.Specifications Symbol Parameter Ratings Units ...

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SeekIC No. : 004341075 Detail

FDD5202P: Features: • -8 A, -60 V. RDS(on) = 0.3 W @ VGS = -10 V RDS(on) = 0.5 W @ VGS = -4.5 V.• Low gate charge (15.5nC typical).• Fast switching speed.Application• DC/DC converter&#...

FDD5202P Data Sheet

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Part Number:
FDD5202P
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• -8 A, -60 V. RDS(on) = 0.3 W @ VGS = -10 V RDS(on) = 0.5 W @ VGS = -4.5 V.
• Low gate charge (15.5nC typical).
• Fast switching speed.


Application

• DC/DC converter
• Motor drives
• L.D.O.


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
-60
±20
-8
-2.3
-15
39
2.8
1.3
-55 to +150
V
V
A


W


°C
ID
 Maximum Drain Current -Continuous
TA = 25		 (Note 1)
(Note 1a)
PD
 Maximum Power Dissipation TC = 25
TA = 25
TA = 25		 (Note 1)
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range



Description

This FDD5202P P-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.




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