MOSFET 60V P-Ch PowerTrench
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 15 A | ||
Resistance Drain-Source RDS (on) : | 0.076 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Symbol | Parameter | Ratings | Units |
VDSS | Drain-Source Voltage | 35 | V |
VGSS | Gate-Source Voltage | ±20 | V |
ID | Drain Current Continuous (Note 3) Pulsed (Note 1a) |
-15 | A |
-45 | |||
PD | Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) |
42 | W |
3.8 | |||
1.6 | |||
TJ, TSTG | Operating and Storage Junction Temperature Range | 55 to +150 | °C |
This 60V P-Channel MOSFET FDD5614P uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.
Technical/Catalog Information | FDD5614P |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 4.5A, 10V |
Input Capacitance (Ciss) @ Vds | 759pF @ 30V |
Power - Max | 1.6W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 24nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDD5614P FDD5614P FDD5614PCT ND FDD5614PCTND FDD5614PCT |