FDD5690

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.023 Ohms
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-252AA


Description

The FDD5690 is a 60V N-channel PowerTrench MOSFET.This N-Channel MOSFET has been designed specifcally to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Features of the FDD5690 are:(1)30 A,60 V. RDS(ON) = 0.027 @ VGS =10 V,RDS(ON) = 0.032 @ VGS =6 V; (2)low gate charge (23nC typical); (3)high performance trench technology for extremely low RDS(ON); (4)fast switching speed.This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

The absolute maximum ratings of the FDD5690 can be summarized as:(1)drain-source voltage:60 V;(2)storage temperature range:-55 to 150;(3)drain current:30A;(4)operating junction temperature:-55 to 150;(5)power dissipation:50W;(6)gate-source voltage:±20V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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Parameters:

Technical/Catalog Information	FDD5690
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	27 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	1110pF @ 25V
Power - Max	1.3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDD5690 FDD5690 FDD5690CT ND FDD5690CTND FDD5690CT