FDD5670

MOSFET 60V N-Ch PowerTrench

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FDD5670 Picture
SeekIC No. : 00156071 Detail

FDD5670: MOSFET 60V N-Ch PowerTrench

floor Price/Ceiling Price

US $ .53~.59 / Piece | Get Latest Price
Part Number:
FDD5670
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1730
  • 1730~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.59
  • $.55
  • $.55
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : TO-252AA


Features:

48 A, 60 V. RDS(ON)   = 0.015  @ VGS  = 10 V
   
    R DS(ON)  = 0.018 @ VGS  = 6 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
   low R DS(ON)



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 60 V
VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) ±20 V
VGSS Gate-Source Voltage 48 V
ID Continuous Drain Current @TC=25°C (Note 3)
@TA=25°C (Note 1a)
Pulsed (Note 1a)
10 A
100
70
PD Power Dissipation: @TC=25°C (Note 3)
                              @TA=25°C (Note 1a
                              @TA=25°C (Note 1b)
55 W
2.8
1.3
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

This FDD5670 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs FDD5670 feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)  specifications.

The result is a MOSFET FDD5670 that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.




Parameters:

Technical/Catalog InformationFDD5670
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C52A
Rds On (Max) @ Id, Vgs15 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 2739pF @ 15V
Power - Max1.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs73nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDD5670
FDD5670



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