FDC655BN

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.025 Ohms
Configuration : Single Quad Drain
Package / Case : SSOT-6


Features:

6.3 A, 30 V.RDS(ON)= 25 mΩ@ VGS= 10 VRDS(ON)= 33 mΩ@ VGS= 4.5 V
Fast switching
Low gate charge
High performance trench technology for extremely low Rdson


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ± 20 6.3 20 1.6 0.8 55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 30

°C/W °C/W

Description

This FDC655BN N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance.

These FDC655BN devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parameters:

Technical/Catalog Information	FDC655BN
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.3A
Rds On (Max) @ Id, Vgs	25 mOhm @ 6.3A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 15V
Power - Max	800mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC655BN FDC655BN FDC655BNCT ND FDC655BNCTND FDC655BNCT