MOSFET Complementary PowerTrench
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | - 4.2 A, 5.9 A | ||
Resistance Drain-Source RDS (on) : | 0.055 Ohms | Configuration : | Dual Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Q1 |
Q2 |
Units |
VDSS |
Drain-Source Voltage |
20 |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
±12 |
V |
ID, IO |
Drain Current - Continuous
- Pulsed
|
4.2 |
5.9 |
A |
20 |
20 | |||
PD |
Power Dissipation for Dual Operation (Note1a) |
1.6 |
W | |
Power Dissipation for single Operation (Note 1a)
(Note 1b) |
1.8 | |||
1.2 | ||||
TJ, Tstg |
Operating and Storage Tempature Ranger |
-55 to +150 |
°C |
These FDC6020C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices FDC6020C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical/Catalog Information | FDC6020C |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 5.9A, 4.2A |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.9A, 4.5V |
Input Capacitance (Ciss) @ Vds | 677pF @ 10V |
Power - Max | 1.2W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 8nC @ 4.5V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC6020C FDC6020C FDC6020CCT ND FDC6020CCTND FDC6020CCT |