FDC6020C

MOSFET Complementary PowerTrench

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FDC6020C Picture
SeekIC No. : 00163284 Detail

FDC6020C: MOSFET Complementary PowerTrench

floor Price/Ceiling Price

Part Number:
FDC6020C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : - 4.2 A, 5.9 A
Resistance Drain-Source RDS (on) : 0.055 Ohms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.055 Ohms
Configuration : Dual Dual Source
Continuous Drain Current : - 4.2 A, 5.9 A


Features:

•  Q14.2 A, 20V.   RDS(ON)  = 55 mΩ @ VGS =4.5 V 
                                  RDS(ON)  = 82 mΩ @ VGS =2.5 V
•  Q25.9 A,   20V.    RDS(ON)  = 27 mΩ @ VGS =  4.5 V 
                                  RDS(ON)  = 39 mΩ @ VGS =  2.5 V 
•  Low gate charge
•  High performance trench technology for extremely low RDS(ON).  
•  FLMP SSOT-6 package:  Enhanced thermal performance in industry-standard package size



Application

•  DC/DC converter 
• Load switch
• Motor Driving



Specifications

Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
20
20
V
VGSS
Gate-Source Voltage
±12
±12
V
ID, IO
Drain Current - Continuous    
                       - Pulsed
 
4.2
5.9
A
20
20
PD
Power Dissipation for Dual Operation (Note1a)                                            
1.6
W
Power Dissipation for single Operation  (Note 1a)
                                                               (Note 1b)
1.8
1.2
TJ, Tstg
Operating and Storage Tempature Ranger
-55 to +150
°C



Description

These FDC6020C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDC6020C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationFDC6020C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.9A, 4.2A
Rds On (Max) @ Id, Vgs27 mOhm @ 5.9A, 4.5V
Input Capacitance (Ciss) @ Vds 677pF @ 10V
Power - Max1.2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs8nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6020C
FDC6020C
FDC6020CCT ND
FDC6020CCTND
FDC6020CCT



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