MOSFET Dual N-Channel 2.5V Spec PowerTrench
FDC6000NZ: MOSFET Dual N-Channel 2.5V Spec PowerTrench
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 7.3 A | ||
Resistance Drain-Source RDS (on) : | 0.02 Ohms | Configuration : | Dual Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
20 |
V |
VGSS |
Gate-Source Voltage |
±12 |
V |
ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
7.3 |
A |
20 | |||
PD |
Power Dissipation for Dual Operation (Note 1a) |
1.6 |
W |
Power Dissipation for Single Operation (Note 1a)
(Note 1b) |
1.8 | ||
1.2 | |||
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
This FDC6000NZ N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
Technical/Catalog Information | FDC6000NZ |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 7.3A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 6.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 840pF @ 10V |
Power - Max | 1.2W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC6000NZ FDC6000NZ FDC6000NZTR ND FDC6000NZTRND FDC6000NZTR |