FDC6000NZ

MOSFET Dual N-Channel 2.5V Spec PowerTrench

product image

FDC6000NZ Picture
SeekIC No. : 00160173 Detail

FDC6000NZ: MOSFET Dual N-Channel 2.5V Spec PowerTrench

floor Price/Ceiling Price

Part Number:
FDC6000NZ
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/18

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Dual Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 7.3 A
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.02 Ohms
Configuration : Dual Dual Source


Features:

•   6.5 A,  20 V  RDS(ON) =  20  mΩ @ VGS = 4.5 V 
                        RDS(ON) =  28  mΩ @ VGS = 2.5 V 
 •  ESD protection diode (note 3)
•  High performance trench technology for extremely low RDS(ON)
•  FLMP SSOT-6 package:  Enhanced thermal performance in industry-standard package size



Application

•  Battery management/Charger Application 
•  Load switch



Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
 Drain Current - Continuous  (Note 1a)
 - Pulsed
7.3
A
20
PD
Power Dissipation for Dual Operation   (Note 1a)
1.6
W
Power Dissipation for Single Operation  (Note 1a)
                                  (Note 1b)
1.8
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C




Description

This FDC6000NZ N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.  




Parameters:

Technical/Catalog InformationFDC6000NZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs20 mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) @ Vds 840pF @ 10V
Power - Max1.2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6000NZ
FDC6000NZ
FDC6000NZTR ND
FDC6000NZTRND
FDC6000NZTR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Potentiometers, Variable Resistors
Cables, Wires
Isolators
Connectors, Interconnects
Crystals and Oscillators
View more