FDC645N_F095

MOSFET 30V 5.5A N-CH POWERTRENCH

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FDC645N_F095: MOSFET 30V 5.5A N-CH POWERTRENCH

floor Price/Ceiling Price

Part Number:
FDC645N_F095
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 26 mOhms Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 26 mOhms
Continuous Drain Current : 5.5 A
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Package / Case : SuperSOT-6


Parameters:

Technical/Catalog InformationFDC645N_F095
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.5A
Rds On (Max) @ Id, Vgs26 mOhm @ 6.2A, 10V
Input Capacitance (Ciss) @ Vds 1460pF @ 15V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs21nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC645N_F095
FDC645N_F095



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