MOSFET 12V P-Channel PowerTrench
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 12 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | - 2.5 A | ||
Resistance Drain-Source RDS (on) : | 0.09 Ohms | Configuration : | Dual Common Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units | ||
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
Q1 (N) |
Q2 (P) |
V V A W °C | |
30 ±16 2.4 7 |
12 ±8 2.5 7 | ||||
ID |
Drain Current Continuous Pulsed |
(Note 1a) | |||
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | |||
TJ,TSTG | Operating and Storage Junction Temperature Range |
1.3 0.7 55 to +150 |
RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1b) (Note 1) |
100 175 60 |
°C/W |
This complementary P-Channel MOSFET FDC6432SH with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package.
Technical/Catalog Information | FDC6432SH |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 30V, 12V |
Current - Continuous Drain (Id) @ 25° C | 2.4A, 2.5A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.4A, 10V |
Input Capacitance (Ciss) @ Vds | 270pF @ 15V |
Power - Max | 700mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3.5nC @ 5V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC6432SH FDC6432SH |