FDC6432SH

MOSFET 12V P-Channel PowerTrench

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FDC6432SH Picture
SeekIC No. : 00160763 Detail

FDC6432SH: MOSFET 12V P-Channel PowerTrench

floor Price/Ceiling Price

Part Number:
FDC6432SH
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : - 2.5 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Dual Common Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : - 12 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Package / Case : SSOT-6
Continuous Drain Current : - 2.5 A
Configuration : Dual Common Dual Drain


Features:

• SyncFET RDS(ON) = 90 mΩ @ VGS = 10 V 2.4 A, 30V RDS(ON) = 105 mΩ @ VGS = 4.5 V
• P channel RDS(ON) = 90 mΩ @ VGS = 4.5 V
2.5 A, 12V RDS(ON) = 125 mΩ @ VGS = 2.5 V R RDS(ON) = 220 mΩ @ VGS = 1.8 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)



Application

·DC/DC converter
·Power management



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Q1 (N)
Q2 (P)
V
V
A

W

°C
30
±16
2.4
7
12
±8
2.5
7
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range
1.3
0.7
55 to +150

THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
100
175
60
°C/W




Description

This complementary P-Channel MOSFET FDC6432SH with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package.




Parameters:

Technical/Catalog InformationFDC6432SH
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V, 12V
Current - Continuous Drain (Id) @ 25° C2.4A, 2.5A
Rds On (Max) @ Id, Vgs90 mOhm @ 2.4A, 10V
Input Capacitance (Ciss) @ Vds 270pF @ 15V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.5nC @ 5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6432SH
FDC6432SH



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