MOSFET 20V/-20V N/P
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | + 3 A, - 2.2 A | ||
Resistance Drain-Source RDS (on) : | 0.07 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Symbol |
Parameter |
Q1 | Q2 |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
20 ±12 3.0 12 |
20 ±12 2.2 6 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed |
(Note 1a) | |||
PD |
Maximum Power Dissipation |
(Note 1a) (Note 1b) | |||
TJ, TSTG | Operating and Storage Junction Temperature Range |
0.96 0.9 0.7 55 to +150 |
These FDC6420C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices FDC6420C have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Technical/Catalog Information | FDC6420C |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3A, 2.2A |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 3A, 4.5V |
Input Capacitance (Ciss) @ Vds | 324pF @ 10V |
Power - Max | 700mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 4.6nC @ 4.5V |
Package / Case | SuperSOT-6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDC6420C FDC6420C FDC6420CCT ND FDC6420CCTND FDC6420CCT |