FDC6420C

MOSFET 20V/-20V N/P

product image

FDC6420C Picture
SeekIC No. : 00152164 Detail

FDC6420C: MOSFET 20V/-20V N/P

floor Price/Ceiling Price

US $ .21~.32 / Piece | Get Latest Price
Part Number:
FDC6420C
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.32
  • $.27
  • $.23
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : +/- 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : + 3 A, - 2.2 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Drain-Source Breakdown Voltage : +/- 20 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.07 Ohms
Continuous Drain Current : + 3 A, - 2.2 A


Features:

` Q1 3.0 A, 20V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V
` Q2 2.2 A, 20V. RDS(ON) = 125 mW @ VGS = 4.5 V RDS(ON) = 190 mW @ VGS = 2.5 V
` Low gate charge
` High performance trench technology for extremely low RDS(ON).
` SuperSOT 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).



Application

· DC/DC converter
· Load switch
· LCD display inverter



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Q1 Q2
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
±12
3.0
12
20
±12
2.2
6
V
V
A


W


°C
ID
Drain Current Continuous
Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
0.96
0.9
0.7
55 to +150



Description

These FDC6420C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices FDC6420C have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.




Parameters:

Technical/Catalog InformationFDC6420C
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3A, 2.2A
Rds On (Max) @ Id, Vgs70 mOhm @ 3A, 4.5V
Input Capacitance (Ciss) @ Vds 324pF @ 10V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs4.6nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6420C
FDC6420C
FDC6420CCT ND
FDC6420CCTND
FDC6420CCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Connectors, Interconnects
Optical Inspection Equipment
Industrial Controls, Meters
Crystals and Oscillators
Motors, Solenoids, Driver Boards/Modules
View more