FDC638P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 4.5 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.048 Ohms


Features:

·-4.5 A, -20 V. RDS(ON) = 0.045 W @ VGS = -4.5 V RDS(ON) = 0.065 W @ VGS = -2.5 V.
·Low gate charge (13nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).




Pinout






Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-20 ±8 -4.5 -20 1.6 0.8 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 30

°C/W °C/W

Description

This FDC638P is a kind of 2.5V specified MOSFET is produced using fairchild semiconductor's advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

The features of FDC638P can be summarized as (1)-4.5 A, -20 V. RDS(ON)= 0.045 @ VGS = -4.5 V, RDS(ON)= 0.065 @ VGS= -2.5 V; (2)low gate charge (13nC typical); (3)high performance trench technology for extremely low RDS(ON); (4)super SOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

The absolute maximum ratings of FDC638P are (1)VDSS drain-source voltage: -20 V; (2)VGSS gate-source voltage - Continuous: ±8 V; (3)ID drain current - continuous (Note 1a): -4.5A/- Pulsed: -20A; (4)PD maximum power dissipation (Note 1a): 1.6 W/(Note 1b): 0.8W; (5)TJ, TSTG operating and storage temperature range: -55 to 150 °C.

Parameters:

Technical/Catalog Information	FDC638P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	48 mOhm @ 4.5A, 4.5V
Input Capacitance (Ciss) @ Vds	1160pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC638P FDC638P FDC638PTR ND FDC638PTRND FDC638PTR