FDC6321C

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.45 Ohms
Drain-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : + 0.68 A, - 0.46 A


Features:

N-Ch 25 V, 0.68 A,  R _DS(ON)= 0.45 W @ V_GS= 4.5 V
P-Ch -25 V, -0.46 A, R _DS(ON)= 1.1 W @ V_GS= -4.5 V.
Very low level gate drive requirements allowing  direct
operation in 3 V circuits. V_GS(th)< 1.0V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model
Replace multiple dual NPN & PNP digital transistors.


Specifications

Symbol	Parameter	N-Channel	P-Channel	Units
VDSS, VCC	Drain-Source Voltage, Power Supply Voltage	25	-25	V
VGSS, VIN	Gate-Source Voltage,	8	-8	V
ID, IO	Drain Current - Continuous                           - Pulsed	0.68	-0.46	A
		2	1.5
PD	Maximum Power Dissipation (Note 1a)                                                                    (Note1b)	0.9		W
		0.7
TJ, Tstg	Operating and Storage Tempature Ranger	-55 to +150		°C
ESD	Electrostatic Discharge Rating MIL-STD-883D       Human Body Model (100pf / 1500 Ohm)	6		kV

Description

These dual N & P Channel logic level enhancement mode field effect transistors FDC6321C are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  This  device FDC6321C has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.

Parameters:

Technical/Catalog Information	FDC6321C
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	680mA, 460mA
Rds On (Max) @ Id, Vgs	450 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds	50pF @ 10V
Power - Max	700mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	2.3nC @ 5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6321C FDC6321C FDC6321CCT ND FDC6321CCTND FDC6321CCT