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FDC6312P

MOSFET SSOT-6 P-CH DUAL

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SeekIC No. : 00149639 Detail

FDC6312P: MOSFET SSOT-6 P-CH DUAL

FDC6312P Data Sheet

floor Price/Ceiling Price

US $ .15~.34 / Piece | Get Latest Price
Part Number:
FDC6312P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.34
  • $.27
  • $.18
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 0.115 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.3 A
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.115 Ohms


Features:

•  2.3 A, 20 V. R DS(ON)=  115 mΩ @ VGS = 4.5 V
                             R DS(ON)=  155 mΩ @ VGS = 2.5 V
                             R DS(ON)=  225 mΩ @ VGS = 1.8 V
•  High performance trench technology for extremely low R DS(ON)
• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)


Application

• Power management
• Load switch


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±8
V
ID
 Drain Current - Continuous  (Note 1a)
                       - Pulsed
2.3
A
7
PD
Power Dissipation for Single Operation (Note 1a)
                                                              (Note 1b)
                                                              (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C



Description

These FDC6312P P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.




Parameters:

Technical/Catalog InformationFDC6312P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.3A
Rds On (Max) @ Id, Vgs115 mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) @ Vds 467pF @ 10V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs7nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6312P
FDC6312P
FDC6312PCT ND
FDC6312PCTND
FDC6312PCT



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