FDC6303N

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Gate-Source Breakdown Voltage : 8 V
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.45 Ohms
Continuous Drain Current : 0.68 A


Features:

25 V, 0.68 Acontinuous, -0.5 A Peak.
         R _DS(ON)= 0.6 W @ V_GS= -2.7 V
         R _DS(ON) = 0.45W@ V_GS= -4.5 V
Very low level gate drive requirements allowing  direct operation in 3V circuits. V _GS(th)<1.5V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model
Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET. 


Specifications

Symbol	Parameter	FDC6304P	Units
VDSS	Drain-Source Voltage, Power Supply Voltage	25	V
VGSS	Gate-Source Voltage,	8	V
ID, IO	Drain Current - Continuous                           - Pulsed	0.68	A
		2
PD	Maximum Power Dissipation (Note 1a)                                                                    (Note1b)	0.9	W
		0.7
TJ, Tstg	Operating and Storage Tempature Ranger	-55 to +150	°C
ESD	Electrostatic Discharge Rating MIL-STD-883D       Human Body Model (100pf / 1500 Ohm)	6.0	kV

Description

These dual N-Channel logic level enhancement mode  field effect transistors FDC6303N are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.  This  device FDC6303N has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Parameters:

Technical/Catalog Information	FDC6303N
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	680mA
Rds On (Max) @ Id, Vgs	450 mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) @ Vds	50pF @ 10V
Power - Max	700mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	2.3nC @ 4.5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6303N FDC6303N FDC6303NDKR ND FDC6303NDKRND FDC6303NDKR