DescriptionThe FA38SA50LCP is designed as one kind of power MOSFETs with current of 38A. It is the third generation power MOSFETs from Vishay HPP which provides the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The SOT-227 p...
FA38SA50LCP: DescriptionThe FA38SA50LCP is designed as one kind of power MOSFETs with current of 38A. It is the third generation power MOSFETs from Vishay HPP which provides the designer with the best combinatio...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The FA38SA50LCP is designed as one kind of power MOSFETs with current of 38A. It is the third generation power MOSFETs from Vishay HPP which provides the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.
FA38SA50LCP has eleven features. (1)Fully isolated package. (2)Easy to use and parallel. (3)Low on-resistance. (4)Dynamic dV/dt rating. (5)Fully avalanche rated. (6)Simple drive requirements. (7)Low drain to case capacitance. (8)Low internal inductance. (9)UL pending. (10)Compliant to RoHS directive 2002/95/EC. (11)Designed for industrial level. Those are all the main features.
Some absolute maximum ratings of FA38SA50LCP have been concluded into several points as follow. (1)Its continuous drain current at Vgs 10 V would be 38A at Tc=25°C and would be 24A at Tc=100°C. (2)Its pulsed drain current would be 150A. (3)Its power dissipation would be 500W. (4)Its linear derating factor would be 4.0W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 580mJ. (7)Its avalanche current would be 38A. (8)Its repetitive avalanche energy would be 50mJ. (9)Its peak diode recovery dV/dt would be 10V/ns. (10)Its operating junction and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of FA38SA50LCP are concluded as follow. (1)Its drain to source breakdown voltage would be min 500V. (2)Its breakdown voltage temperature coefficient would be typ 0.66V/°C. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!