Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 IDM Pulsed Drain Current 150 PD @TC = 25°C Power Dissipation 500 W Linear Derating Factor 4.0 W/°C VGS Gate-...
FA38SA50: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 IDM Pulsed Drain Current ...
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 38 | V |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 24 | |
IDM | Pulsed Drain Current | 150 | |
PD @TC = 25°C | Power Dissipation | 500 | W |
Linear Derating Factor | 4.0 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 580 | mJ |
IAR | Avalanche Current | 38 | A |
EAR | Repetitive Avalanche Energy | 50 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 16 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
VISO | Insulation Withstand Voltage (AC-RMS) | 2.5 | KV |
Mounting torque, M4 srew | 1.3 | N•m |
FA38SA50 Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The FA38SA50 SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.