Manufacturer: Vishay Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 500W
Current - Continuous Drain (Id) @ 25° C: 38A
Gate Charge (Qg) @ Vgs: 420nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
Input Capacitance (Ciss) @ Vds: 6900pF @ 25V
Features: ·Fully Isolated Package
·Easy to Use and Parallel
·Low On-Resistance
·Dynamic dv/dt Rating
·Fully Avalanche Rated
·Simple Drive Requirements
·Low Drain to Case Capacitance
·Low Internal InductanceSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
38 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
24 |
| IDM |
Pulsed Drain Current |
150 |
| PD @TC = 25°C |
Power Dissipation |
500 |
W |
| |
Linear Derating Factor |
4.0 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
580 |
mJ |
| IAR |
Avalanche Current |
38 |
A |
| EAR |
Repetitive Avalanche Energy |
50 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
16 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 150 |
°C |
| VISO |
Insulation Withstand Voltage (AC-RMS) |
2.5 |
kV |
| |
Mounting torque, M4 srew |
(1.3N•M) |
|
DescriptionFA38SA50LC Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The FA38SA50LC SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry.
FA38SA50LC Data Sheet
