TRANS GAN 40V 10A BUMPED DIE
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Series: | eGaN® | Manufacturer: | EPC | ||
FET Type: | GaNFET N-Channel, Gallium Nitride | Gain : | 15.5 dB | ||
Transistor Type: | - | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 40V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 10A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 5A, 5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.5V @ 2mA | Gate Charge (Qg) @ Vgs: | 2.48nC @ 5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 300pF @ 20V | ||
Power - Max: | - | Mounting Type: | Surface Mount | ||
Package / Case: | 5-LGA | Supplier Device Package: | 5-LGA (1.7x1.1) |