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EPC2014

TRANS GAN 40V 10A BUMPED DIE

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SeekIC No. : 003430236 Detail

EPC2014: TRANS GAN 40V 10A BUMPED DIE

EPC2014 Data Sheet

floor Price/Ceiling Price

US $ .58~.67 / Piece | Get Latest Price
Part Number:
EPC2014
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • 1000~2000
  • 2000~5000
  • 5000~10000
  • Unit Price
  • $.67
  • $.62
  • $.6
  • $.58
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 2mA Gate Charge (Qg) @ Vgs: 2.48nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 300pF @ 20V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 5-LGA Supplier Device Package: 5-LGA (1.7x1.1)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25° C: 10A
Power - Max: -
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Package / Case: 5-LGA
Supplier Device Package: 5-LGA (1.7x1.1)
Gate Charge (Qg) @ Vgs: 2.48nC @ 5V
Input Capacitance (Ciss) @ Vds: 300pF @ 20V


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