EPC2007, US $ 1.03-1.89, EPC2007 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003432806 Detail

EPC2007: TRANS 100V 30MO BUMPED DIE

EPC2007 Data Sheet

US $ 1.03~1.89 / Piece | Get Latest Price

Part Number:: EPC2007
Mfg:
Supply Ability:: 5000

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10~100
100~500

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$1.89
$1.62
$1.32
$1.03

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Upload time: 2024/7/15

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Recent History
What is this?

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Product Details

Quick Details

Series:	eGaN®	Manufacturer:	EPC
FET Type:	GaNFET N-Channel, Gallium Nitride	Gain :	15.5 dB
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	100V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	6A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	30 mOhm @ 6A, 5V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 1.2mA	Gate Charge (Qg) @ Vgs:	2.1nC @ 5V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	205pF @ 50V
Power - Max:	-	Mounting Type:	Surface Mount
Package / Case:	Die Outline (5-Solder Bar)	Supplier Device Package:	Die Outline (5-Solder Bar)

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 6A
Drain to Source Voltage (Vdss): 100V
Power - Max: -
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Gate Charge (Qg) @ Vgs: 2.1nC @ 5V
Input Capacitance (Ciss) @ Vds: 205pF @ 50V
Package / Case: Die Outline (5-Solder Bar)
Supplier Device Package: Die Outline (5-Solder Bar)

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EPC2007

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