Position: Home  > All Categories> Integrated Circuits (ICs) > EPC2010

EPC2010

TRANS GAN 200V 12A BUMPED DIE

product image

EPC2010 Picture
See larger image
SeekIC No. : 003432807 Detail

EPC2010: TRANS GAN 200V 12A BUMPED DIE

EPC2010 Data Sheet

floor Price/Ceiling Price

US $ 4.05~5.96 / Piece | Get Latest Price
Part Number:
EPC2010
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $5.96
  • $5.4
  • $4.5
  • $4.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 3mA Gate Charge (Qg) @ Vgs: 5nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 480pF @ 100V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 7-SMD, Bump Lead Supplier Device Package: 7-LGA (3.6x1.6)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 200V
Power - Max: -
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Gate Charge (Qg) @ Vgs: 5nC @ 5V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Input Capacitance (Ciss) @ Vds: 480pF @ 100V
Package / Case: 7-SMD, Bump Lead
Supplier Device Package: 7-LGA (3.6x1.6)


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Isolators
HCPL062N
HCPL316J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Tools
TCP202
G084SN05 V.3
View more