EPC2012

TRANS GAN 200V 3A BUMPED DIE

product image

EPC2012 Picture
SeekIC No. : 003432808 Detail

EPC2012: TRANS GAN 200V 3A BUMPED DIE

floor Price/Ceiling Price

US $ 1.44~2.7 / Piece | Get Latest Price
Part Number:
EPC2012
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~750
  • Unit Price
  • $2.7
  • $2.43
  • $1.98
  • $1.8
  • $1.58
  • $1.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 1.5nC @ 100V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 128pF @ 100V
Power - Max: - Mounting Type: Surface Mount
Package / Case: Die Supplier Device Package: Die    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 3A
Drain to Source Voltage (Vdss): 200V
Power - Max: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
Gate Charge (Qg) @ Vgs: 1.5nC @ 100V
Input Capacitance (Ciss) @ Vds: 128pF @ 100V
Package / Case: Die
Supplier Device Package: Die


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Crystals and Oscillators
Potentiometers, Variable Resistors
Fans, Thermal Management
Tapes, Adhesives
803
View more