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EPC2012

TRANS GAN 200V 3A BUMPED DIE

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SeekIC No. : 003432808 Detail

EPC2012: TRANS GAN 200V 3A BUMPED DIE

EPC2012 Data Sheet

floor Price/Ceiling Price

US $ 1.44~2.7 / Piece | Get Latest Price
Part Number:
EPC2012
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~750
  • Unit Price
  • $2.7
  • $2.43
  • $1.98
  • $1.8
  • $1.58
  • $1.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Quick Details

Series: eGaN® Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 1.5nC @ 100V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 128pF @ 100V
Power - Max: - Mounting Type: Surface Mount
Package / Case: Die Supplier Device Package: Die    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 3A
Drain to Source Voltage (Vdss): 200V
Power - Max: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Series: eGaN®
Manufacturer: EPC
FET Type: GaNFET N-Channel, Gallium Nitride
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3A, 5V
Gate Charge (Qg) @ Vgs: 1.5nC @ 100V
Input Capacitance (Ciss) @ Vds: 128pF @ 100V
Package / Case: Die
Supplier Device Package: Die


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