Features: `Single Power Supply Full voltage range from 2.7 to 3.6 volts for both read and write operations`Sector-Erase CapabilityUniform 2Kword sectors`Block-Erase Capability Uniform 32Kword blocks`Read Access Time Access time: 55, 70 and 90 ns`Power Consumption Active current: 20 mA (Typical) St...
EM39LV800: Features: `Single Power Supply Full voltage range from 2.7 to 3.6 volts for both read and write operations`Sector-Erase CapabilityUniform 2Kword sectors`Block-Erase Capability Uniform 32Kword blocks...
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The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV800 provides a typical Word-Program time of 14 sec and a typical Sector/Block-Erase time of 18 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM39LV800 conforms with the JEDEC standard pin outs for x16 memories. The EM39LV800 is offered in package types of 48-ball FBGA, 48-pin TSOP, and known good dice (KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information).
The EM39LV800 devices are developed for applications that require memories with convenient and economical updating of program, data or configuration, e.g., DVD player, DVD R/W, WLAN, Router, Set-Top Box, etc.