Features: `Single Power Supply Full voltage range from 2.7 to 3.6 volts for both read and write operations Regulated voltage range: 3.0 to 3.6 volts for both read and write operations`Sector-Erase Capability Uniform 4Kbyte sectors`Sector-Erase Capability Uniform 64Kbyte sectors`Read Access Time Ac...
EM39LV040: Features: `Single Power Supply Full voltage range from 2.7 to 3.6 volts for both read and write operations Regulated voltage range: 3.0 to 3.6 volts for both read and write operations`Sector-Erase C...
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The EM39LV040 is a 4M bits Flash memory organized as 512K x 8 bits. The EM39LV040 uses a single 3.0 volt-only power supply for both Read and Write functions. Featuring high performance Flash memory technology, the EM39LV040 provides a typical Byte-Program time of 11 sec and a typical Sector-Erase time of 40 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM39LV040 conforms to JEDEC standard pin outs for x8 memories. It is offered in package types of 32-lead PLCC, 32-pin TSOP, and known good die (KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information).
The EM39LV040 devices are developed for applications that require memories with convenient and economical updating of program, data or onfigurations, e.g., Networking cards, CD-RW, Scanner, Digital TV, Electronic Books, GPS, Router/Switcher, etc.