Features: · 128Kx32 bit CMOS Static· Analog SHARCTM External Memory Solution· ADSP-21060L· ADSP-21062L· Random Access Memory Array· Fast Access Times: 12, 15 and 20ns· User Confi gurable Organization· with Minimal Additional Logic· Master Output Enable and Write Control· TTL Compatible I...
EDI8L32128V: Features: · 128Kx32 bit CMOS Static· Analog SHARCTM External Memory Solution· ADSP-21060L· ADSP-21062L· Random Access Memory Array· Fast Access Times: 12, 15 and 20ns· User Confi gurable Orga...
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Features: Access Times of 70, 85, 100ns Available with Single Chip Selects (EDI88128) or Dual Chip...
Features: Access Times of 15*, 17, 20, 25, 35, 45, 55nsBattery Back-up Operation2V Data Retention ...
Voltage on Vcc Relative to Vss | -0.5V to +4.6V |
Operating Temperature TA (Ambient) Commercial Industrial |
0°C to + 70°C -40°C to +85°C |
Storage Temperature | -55°C to +125°C |
Power Dissipation | 3 Watts |
Output Current. | 20 mA |
Junction Temperature, TJ | 175°C |
The EDI8L32128V is a high speed, 3.3V, four megabit density Static RAM. The device is available with access times of 12, 15 and 20ns, allowing the device to support 60MHZ DSPs with no wait states. The high speed, 3.3V supply voltage and byte confi gurability make the device ideal for interfacing with Analog Devices ADSP-21062L or ADSP-21060L SHARC DSPs.
The EDI8L32128V device can be confi gured as a 128Kx32 and used to create a single chip external data memory solution for the SHARC (fi gure 1). Providing a 51% space savings when compared to four 128Kx8, 400mil wide plastic SOJs. The EDI8L32128V has a 10pf load on the data lines vs. 24pf for four plastic SOJs. Memory upgrades in the same footprint can be accomplished with the EDI8L32256V (256Kx32) or the EDI8L32512V (512KX32). This is covered in detail in the application report "The EDI's x32 MCM-L SRAM Family: Integrated Memory Solution for the Analog SHARC DSP" Alternatively the device's chip enables can confi gure it as a 256Kx16. A 256Kx48 program memory array for the SHARC s created using three devices (fi gure 2). If this memory is too deep, two 128Kx24's (EDI8L24128V) can be used to create a 128Kx48 memory array.