Features: Access Times of 15*, 17, 20, 25, 35, 45, 55nsBattery Back-up Operation2V Data Retention (EDI88130LPS)CS1, CS2 & OE Functions for Bus ControlInputs and Outputs Directly TTL CompatibleOrganized as 128Kx8Commercial, Industrial and Military Temperature RangesThru-hole and Surface Mount P...
EDI88130CS: Features: Access Times of 15*, 17, 20, 25, 35, 45, 55nsBattery Back-up Operation2V Data Retention (EDI88130LPS)CS1, CS2 & OE Functions for Bus ControlInputs and Outputs Directly TTL CompatibleOr...
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Features: Access Times of 70, 85, 100ns Available with Single Chip Selects (EDI88128) or Dual Chip...
Features: Access Times of 15, 17, 20, 25, 35, 45, 55nsData Retention Function (LPA version)TTL Com...
Parameter | Unit | |
Voltage on any pin relative to Vss | -0.2 to 7.0 | V |
Operating Temperature TA (Ambient) | ||
Industrial | -40 to +85 | °C |
Military | -55 to +125 | °C |
Storage Temperature, Plastic | -65 to +150 | °C |
Power Dissipation | 1.7 | W |
Output Current | 40 | mA |
Junction Temperature, TJ | 175 | °C |
The EDI88130CS is a high speed, high performance, 128Kx8 bits monolithic Static RAM. An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large mul-tiple pages of memory are required.
The EDI88130CS has eight bi-directional input-output lines to provide simultaneous access to all bits in a word.A low power version, EDI88130LPS, offers a 2V data retention function for battery back-up applications.Military product is available compliant to MIL-PRF-38535.