EDI8F32512V

Features:

512Kx32 bit CMOS Static RAM
Random Access Memory
  Access Times: 15, 20, and 25ns
  Individual Byte Selects
  Fully Static, No Clocks
  TTL Compatible I/O
High Density Package
  72 Pin ZIP, No. 173
  72 lead SIMM, No. 174 (Gold Option)
  Common Data Inputs and Outputs
Single +3.3V (±10%) Supply Operation


Pinout




Specifications

Parameter	Maximum Ratings
Voltage on any pin relative to VSS	-0.5V to 4.6V
Operating Temperature TA (Ambient) Commercial	0°C to +70°C
Storage Temperature, Plastic	-55°C to +125°C
Power Dissipation	2.5 Watt
Output Current	20 mA

*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The EDI8F32512V is a high speed 16 Mb Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in SOJ packages on an epoxy laminate (FR4) board.

Four chip enables (E0#-E3#) are used to independently enable the four bytes. Reading or writing can be executed on individual bytes or any combination of multiple bytes through proper use of selects.

The EDI8F32512V is offered in 72 pin ZIP and 72 lead SIMM packages, which enable 16 Mb of memory to be placed in less than 1.3 square inches of board space.
All inputs and outputs are TTL compatible and operate from a single 3.3V supply. Fully asynchronous circuitry requires no clocks or refreshing for operation and provides equal access and cycle times for ease of use.

Pins PD0- PD3, are used to identify module memory density in applications where alternate modules can be interchanged.