EDI8F32512C

Features:

512Kx32 bit CMOS Static
Random Access Memory
  Access Times: 15, 20, and 25ns
  Individual Byte Selects
  Fully Static, No Clocks
  TTL Compatible I/O
High Density Package
  72 Pin ZIP, No. 173
  72 lead SIMM, No. 174 (Gold Option)
  Common Data Inputs and Outputs
Single +5V (±10%) Supply Op er a tion


Pinout




Specifications

Parameter	Maximum Ratings
Voltage on any pin relative to VSS	-0.5V to 7.0V
Operating Temperature TA (Ambient) Commercial Industrial	0°C to +70°C -40°C to +85°C
Storage Temperature, Plastic	-55°C to +125°C
Power Dissipation	5.0 Watt
Output Current	20 mA

*Stress greater than those listed under "Ab so lute Maxi mum Ratings" may cause permanent damage to the device. This is a stress rating only and functional op era tion of the device at these or any other conditions greater than those in di cated in the operational sections of this speci fi ca tion is not im plied. Ex po sure to ab so lute maxi mum rating con di tions for ex tended periods may affect re lia bil ity.


Description

The EDI8F32512C is a high speed 16 megabit Static RAM module organized as 512K words by 32 bits. This module is constructed from four 512Kx8 Static RAMs in SOJ pack ag es on an epoxy laminate (FR4) board.

Four chip enables (EØ-E3) are used to in de pend ently en able the four bytes. Reading or writing can be ex e cut ed on individual bytes or any combination of multiple bytes through proper use of selects.

The EDI8F32512C is offered in 72 pin ZIP and 72 lead SIMM packages, which enable 16 mega bits of mem o ry to be placed in less than 1.3 square inches of board space.

All inputs and outputs are TTL compatible and op er ate from a single 5V supply. Fully asynchronous cir cuit ry re quires no clocks or refreshing for operation and pro vides equal access and cycle times for ease of use.

Pins PD1- PD4, are used to identify module memory density in ap pli ca tions where alternate modules can be in ter changed.