EBD26UC6AMSA

The EBD26UC6AMSA is 32M words * 64 bits, 2 ranks double data rate (DDR) SDRAM small outline dual in-line memory module, mounting 8 pieces of 256M bits DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.

Features of the EBD26UC6AMSA are:(1)200-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 333Mbps(max.);(4)2.5 V (SSTL_2 compatible) I/O;(5)double-data-rate architecture is two data transfers per clock cycle;(6)bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver;(7)DQS is edge aligned with data for READs is centeraligned with data for WRITEs;(8)differential clock inputs (CK and /CK);(9)DLL aligns DQ and DQS transitions with CK transitions;(10)commands entered on each positive CK edge: data and data mask referenced to both edges of DQS;(11)four internal banks for concurrent operation;(12)data inputs and outputs are synchronized with DQS;(13)auto precharge option for each burst access;(14)programmable burst length: 2, 4, 8;(15)programmable /CAS latency (CL): 2, 2.5;(16)refresh cycles: (8192 refresh cycles /64ms) is 7.8s maximum average periodic refresh interval;(17)2 variations of refresh.

The absolute maximum ratings of the  EBD26UC6AMSA can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +3.7,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +3.7,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 8,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .