EBD21RD4ABNA

Features: • 184-pin socket type dual in line memory module(DIMM) -PCB height: 30.48mm -Lead pitch: 1.27mm• 2.5V power supply• Data rate: 266Mbps/200Mbps (max.)• 2.5 V (SSTL_2 compatible) I/O• Double Data Rate architecture; two data transfers perclock cycle• Bi-d...

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SeekIC No. : 004330937 Detail

EBD21RD4ABNA: Features: • 184-pin socket type dual in line memory module(DIMM) -PCB height: 30.48mm -Lead pitch: 1.27mm• 2.5V power supply• Data rate: 266Mbps/200Mbps (max.)• 2.5 V (SSTL_2...

floor Price/Ceiling Price

Part Number:
EBD21RD4ABNA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 184-pin socket type dual in line memory module(DIMM)
        -PCB height: 30.48mm
        -Lead pitch: 1.27mm
• 2.5V power supply
• Data rate: 266Mbps/200Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers perclock cycle
• Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data atthe receiver
• Data inputs and outputs are synchronized with DQS
• 4 internal banks for concurrent operation(Component)
• DQS is edge aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• LL aligns DQ and DQS transitions with CKtransitions
• Commands entered on each positive CK edge; datareferenced to both edges of DQS
• Auto precharge option for each burst access
• Programmable burst length: 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: (8192 refresh cycles /64ms)
        -7.8µs maximum average periodic refresh interval
• 2 variations of refresh
        -Auto refresh
        -Self refresh
• 1 piece of PLL clock driver, 1 piece of register driverand 1 piece of serial EEPROM (2k bits EEPROM) forPresence Detect (PD)



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT 1.0 to +3.6 V  
Supply voltage relative to VSS VDD, VDDQ 1.0 to +3.6 V  
Short circuit output current IOUT 50 mA  
Power dissipation PD 18 W  
Operating ambient temperature TA 0 to +70 1
Storage temperature Tstg -55 to +125  



Description

The EBD21RD4ABNA is a 256M words × 72 bits, 2bank Double Data Rate (DDR) SDRAM Module,mounted 36 pieces of DDR SDRAM sealed in TCPpackage. Read and write operations are performed atthe cross points of the CK and the /CK. This high speed data transfer EBD21RD4ABNA is realized by the 2-bit prefetchpipelinedarchitecture. Data strobe (DQS) both forread and write are available for high speed and reliabledata bus design. By setting extended mode register,the on-chip Delay Locked Loop (DLL) can be setenable or disable. This module provides high densitymounting without utilizing surface mount technology.Decoupling capacitors are mounted beside each TCPon the module board. 


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