EBD25UC8AMFA

The EBD25UC8AMFA is 32M words * 64 bits, 1 ranks double data rate (DDR) SDRAM unbuffered module,, mounting 8 pieces of 256M bits DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.

Features of the EBD25UC8AMFA are:(1)184-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 333Mbps (max.);(4)2.5 V (SSTL_2 compatible) I/O;(5)double data rate architecture; two data transfers per clock cycle;(6)bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver;(7)data inputs and outputs are synchronized with DQS;(8)4 internal banks for concurrent operation;(9)DQS is edge aligned with data for READs; center aligned with data for WRITEs;(10)differential clock inputs (CK and /CK);(11)DLL aligns DQ and DQS transitions with CK transitions;(12)commands entered on each positive CK edge; data referenced to both edges of DQS;(13)data mask (DM) for write data;(14)auto precharge option for each burst access;(15)programmable burst length: 2, 4, 8;(16)programmable /CAS latency (CL): 2, 2.5;(17)refresh cycles: (8192 refresh cycles /64ms) is 7.8s maximum average periodic refresh interval;(18)2 variations of refresh.

The absolute maximum ratings of the  EBD25UC8AMFA can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +3.7,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +3.7,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 8,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .