EBD25RB4ALFB

The EBD25RB4ALFB is 32M words * 72 bits, 1 rank double data rate (DDR) SDRAM unbuffered module, mounting 18 pieces of 128M bits DDR SDRAM sealed in  TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.

Features of the EBD25RB4ALFB are:(1)184-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 266Mbps(max.);(4)SSTL-2 interface for all inputs and outputs;(5)clock frequency is 133MHz/100MHz (max.);(6)data inputs and outputs are synchronized with DQS;(7)4 banks can operate simultaneously and independently (Component);(8)burst read/write operation;(9)programmable burst length: 2, 4, 8;(10)programmable burst sequence;(11)start addressing capability;(12)programmable /CAS latency (CL): 2, 2.5;(13)4096 refresh cycles: 15.6s (4096/64ms);(14)2 variations of refresh.

The absolute maximum ratings of the  EBD25RB4ALFB can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +3.6,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +3.6,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 21,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .