EBD25EC8AAFA-6B

The EBD25EC8AAFA-6B is 32M words * 72 bits, 1 rank double data rate (DDR) SDRAM unbuffered module, module, mounting 9 pieces of 256M bits DDR SDRAM sealed in  TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.

Features of the EBD25EC8AAFA-6B are:(1)184-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 266Mbps(max.);(4)2.5 V (SSTL_2 compatible) I/O;(5)double-data-rate architecture is two data transfers per clock cycle;(6)bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver;(7)data inputs and outputs are synchronized with DQS;(8)4 internal banks for concurrent operation;(9)DLL aligns DQ and DQS transitions with CK transitions;(10)commands entered on each positive CK edge: data and data mask referenced to both edges of DQS;(11)DQS is edge aligned with data for READs; center aligned with data for WRITEs;(12)commands entered on each positive CK edge; data referenced to both edges of DQS;(13)auto precharge option for each burst access;(14)programmable burst length: 2, 4, 8;(15)programmable /CAS latency (CL): 2, 2.5;(16)refresh cycles: (8192 refresh cycles /64ms) is 7.8s maximum average periodic refresh interval;(17)2 variations of refresh.

The absolute maximum ratings of the  EBD25EC8AAFA-6B can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +3.6,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +3.6,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 9,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -40 to +100,the unit is .