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DS05-11435-1E

Features: • Asynchronous SRAM Interface• COSMORAM Revision 3 Compliance(COSMORAM : Common Specifications of Mobile RAM)• Fast Access Time : tCE = 70 ns Max• Burst Read/Write Access Capability :• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V• Wide Opera...

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SeekIC No. : 004328331 Detail

DS05-11435-1E: Features: • Asynchronous SRAM Interface• COSMORAM Revision 3 Compliance(COSMORAM : Common Specifications of Mobile RAM)• Fast Access Time : tCE = 70 ns Max• Burst Read/Write ...

DS05-11435-1E Data Sheet

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Part Number:
DS05-11435-1E
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Asynchronous SRAM Interface
• COSMORAM Revision 3 Compliance(COSMORAM : Common Specifications of Mobile RAM)
• Fast Access Time : tCE = 70 ns Max
• Burst Read/Write Access Capability :
• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V
• Wide Operating Temperature : TA = − 30 °C to + 85 °C junction Temperature : TJ = − 30 °C to + 90 °C
• Byte Control by LB and UB
• Low-Power Consumption : IDDA1 = 40 mA Max DDS1 = 300 A Max
• Various Power Down mode : Sleep
• Shipping Form : Wafer/Chip


Specifications

Parameters Symbol Rating Unititions
Min Max
Voltage of VDD Supply Relative to VSS * VDD − 0.5 + 2.6 A
Voltage at Any Pin Relative to VSS * VIN, VOUT − 0.5 + 2.6 A
Short Circuit Output Current IOUT − 0.5 + 2.6 mA
Storage Temperature Tstg − 0.5 + 2.6 °C
All voltages are referenced to VSS = 0 V.


Description

DS05-11435-1E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 134,217,728 storages accessible in a 16-bit format.DS05-11435-1E  is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM.

DS05-11435-1E adopts asynchronous mode and synchronous burst mode for fast memory access as user configurable options.

DS05-11435-1E is suited for mobile applications such as Cellular Handset and PDA.




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