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DS05-11422-3E

Features: • Asynchronous SRAM Interface• Fast Access Cycle Time : tAA = tCE = 65 ns Max• 8 words Page Access Capability : tPAA = 20 ns Max• Low Voltage Operating Condition : VDD = +2.6 V to +3.5 V• Wide Operating Temperature : TA = -30 °C to +85 °C• Byte Control...

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SeekIC No. : 004328329 Detail

DS05-11422-3E: Features: • Asynchronous SRAM Interface• Fast Access Cycle Time : tAA = tCE = 65 ns Max• 8 words Page Access Capability : tPAA = 20 ns Max• Low Voltage Operating Condition : ...

DS05-11422-3E Data Sheet

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Part Number:
DS05-11422-3E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Description



Features:

• Asynchronous SRAM Interface
• Fast Access Cycle Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = +2.6 V to +3.5 V
• Wide Operating Temperature : TA = -30 °C to +85 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 30 mA Max IDDS1 = 80 A Max
• Various Power Down mode : Sleep 4M-bit Partial 8M-bit Partial
• Shipping Form : Wafer/Chip, 71-ball plastic FBGA package


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Min
Max
Voltage of VDD Supply Relative to VSS
VDD
-0.5
+3.6
V
Voltage at Any Pin Relative to VSS
VIN, VOUT
−0.5
+3.6
V
Short Circuit Output Current
IOUT
-50
+50
mA
Storage Temperature
TSTG
-55
+125



Description

DS05-11422-3E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format. MB82DP02183C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM. DS05-11422-3E is suited for mobile applications such as Cellular Handset and PDA.




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