DS05-11046-1E

• Single +3.3 V Supply ±0.3 V tolerance
• LVTTL compatible I/O
• 4 K refresh cycles every 65.6 ms
• Four bank operation
• Burst read/write operation and burst read/single write operation capability
• Standard and low power versions
• Programmable burst type, burst length, and CAS latency
• Auto-and Self-refresh (every 16 s)
• CKE power down mode
• Output Enable and Input Data Mask

The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 4-bit format. The MB81F64442C features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F64442C SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a standard DRAM.

The MB81F64442C is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.