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DIM200PKM33-F000

Features: ` 10s Short Circuit Withstand` Soft Punch Through Silicon` Isolated AlSiC Base with AlN substrates` High thermal cycling capabilityApplication· Choppers· Motor Controllers· Power Supplies· Traction AuxiliariesSpecificationsStresses above those listed under 'Absolute Maximum Ratings' may ...

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DIM200PKM33-F000: Features: ` 10s Short Circuit Withstand` Soft Punch Through Silicon` Isolated AlSiC Base with AlN substrates` High thermal cycling capabilityApplication· Choppers· Motor Controllers· Power Supplies·...

DIM200PKM33-F000 Data Sheet

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Part Number:
DIM200PKM33-F000
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

` 10s Short Circuit Withstand
` Soft Punch Through Silicon
` Isolated AlSiC Base with AlN substrates
` High thermal cycling capability


Application

· Choppers
· Motor Controllers
· Power Supplies
· Traction Auxiliaries


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions
Max.
Units
VCES Collector-emitter voltage VGE = 0V
3300
V
VGES Gate-emitter voltage
±20
V
IC Continuous collector current Tcase =90˚C
200
A
IC(PK) Peak collector current 1ms, Tcase = 115˚C
400
A
Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
2.6
W
I2t Diode I2t value (IGBT arm) VR = 0, tp = 10ms, Tvj = 125˚C
20
kA2S
Diode I2t value (Diode arm)
20
Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS,1 min, 50Hz
6000
V
QPD Partial discharge - per module IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS
10
PC



Description

The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configurations covering voltagesfrom 600V to 3300V and currents up to 2400A.

The DIM200PKM33-F000 is a 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.

The module DIM200PKM33-F000 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.




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