Features: 10s Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor ControllersTraction DrivesSpecifications Symbol Parameter Test Conditions Max. Units VCES Collecto...
DIM200PHM33-A000: Features: 10s Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsolated MMC Base with AlN SubstratesApplicationHigh Reliability InvertersMotor ControllersTraction Drive...
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Features: 10s Short Circuit WithstandNon Punch Through SiliconIsolated Copper BaseApplicationInver...
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
VCES |
Collector-emitter voltage |
VGE = 0V |
3300 |
V |
VGES |
Gate-emitter voltage |
- |
±20 |
V |
IC |
Continuous collector current |
Tcase = 80 |
200 |
A |
IC(PK) |
Peak collector current |
1ms, Tcase = 115 |
400 |
A |
Pmax |
Max. transistor power dissipation |
Tcase = 25, T j = 150 |
2315 |
W |
I2t |
Diode I2t value |
VR = 0, tp = 10ms, Tvj = 125 |
20 |
kA2s |
Viso |
Isolationvoltage-per module |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
6000 |
V |
QPD |
Partialdischarge-permodule |
IEC1287.V1=2450V,V2=1800V,50Hz RMS |
10 |
pC |