Features: 10s Short Circuit WithstandNon Punch Through SiliconIsolated Copper BaseApplicationInvertersMotor ControllersTraction DrivesSpecifications Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage V GE = 0V 1700 V VGES Gate-emi...
DIM200MHS17-A000: Features: 10s Short Circuit WithstandNon Punch Through SiliconIsolated Copper BaseApplicationInvertersMotor ControllersTraction DrivesSpecifications Symbol Parameter Test Conditions ...
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Features: 10s Short Circuit WithstandHigh Thermal Cycling CapabilityNon Punch Through SiliconIsola...
Symbol |
Parameter |
Test Conditions |
Max. |
Units |
VCES |
Collector-emitter voltage |
V GE = 0V |
1700 |
V |
VGES |
Gate-emitter voltage |
- |
±20 |
V |
IC |
Continuous collector current |
Tcase = 65 |
200 |
A |
IC(PK) |
Peak collector current |
1ms, Tcase = 110 |
400 |
A |
Pmax |
Max. transistor power dissipation |
Tcase = 25, T j = 150 |
1488 |
W |
I2t |
Diode I2t value |
VR = 0, tp = 10ms, Tvj = 125 |
7.5 |
kA2s |
Viso |
Isolationvoltage-per module |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
V |