Features: • Fast cycle time: (Cycle) (Frequency) CXK77V1840GB-8 8 ns 125 MHz CXK77V1840GB-10 10 ns 100 MHz CXK77V1840GB-12 12 ns83.3 MHz• Fast clock to data valid CXK77V1840GB-8 4 ns CXK77V1840GB-105.5 ns CXK77V1840GB-127.5 ns• High speed, low power consumption• Single +3.3...
CXK77V1840GB-8: Features: • Fast cycle time: (Cycle) (Frequency) CXK77V1840GB-8 8 ns 125 MHz CXK77V1840GB-10 10 ns 100 MHz CXK77V1840GB-12 12 ns83.3 MHz• Fast clock to data valid CXK77V1840GB-8 4 ns CXK...
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Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910AT...
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Item |
Symbol |
Rating |
Unit |
Supply voltage |
VDD |
0.5 to +4.6 |
V |
Input voltage |
VIN |
-0.5 to VCC+0.5 (4.6V max.) |
V |
Output Voltage |
VO |
-0.5 to VCC+0.5 (4.6V max.) |
V |
Allowable power dissipation |
PD |
1.7 |
W |
Operating temperature |
Topr |
0 to 70 |
|
Storage temperature |
Tstg |
-55 to 150 |
|
Soldering temperature • time | Tsolder |
235 • 10 |
• sec |
The CXK77V1840GB-8 is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a single monolithic IC. All input signals except OE are latched at the positive edge of an external clock (CLK). The RAM data from the previous cycle CXK77V1840GB-8 is presented at the positive edge of the subsequent clock cycle. Write operation is initiated by the positive edge of CLK and is internally self-timed. This feature eliminates complex off-chip write pulse generation and provides increased flexibility for incoming signals. Asynchronous OE adds the flexibility of data bus control. 125 MHz operation is obtained from a single 3.3 V power supply.