Features: • Fast cycle time: (Cycle) (Frequency) CXK77920TM/YM-11 11.0ns 90MHz CXK77920TM/YM-12 12.5ns 80MHz CXK77920TM/YM-15 15.0ns 66.7MHz• Fast clock to data valid CXK77920TM/YM-11 6.0ns CXK77920TM/YM-12 6.5ns CXK77920TM/YM-15 7.0ns• High speed, low power consumption• Si...
CXK77920TM-11: Features: • Fast cycle time: (Cycle) (Frequency) CXK77920TM/YM-11 11.0ns 90MHz CXK77920TM/YM-12 12.5ns 80MHz CXK77920TM/YM-15 15.0ns 66.7MHz• Fast clock to data valid CXK77920TM/YM-11 6....
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Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910AT...
Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910AT...
Features: • Fast cycle time: (Cycle) (Frequency) CXK77920TM/YM-11 11.0ns 90MHz CXK77920TM/YM...
Item |
Symbol |
Rating |
Unit |
Supply voltage |
VCC |
0.5 to +7.0 |
V |
Input voltage |
VIN |
0.5 to VCC +0.5 |
V |
Output voltage |
VO |
0.5 to VCC +0.5 |
V |
Allowable power dissipation |
PD |
1 |
W |
Operating temperature |
Topr |
0 to 70 |
|
Storage temperature |
Tstg |
55 to +150 |
|
Soldering temperature • time |
Tsolder |
235 • 10 |
• sec |
The CXK77920TM-11 is a high speed CMOS synchronous static RAM with common l/O pins, organized as 262144-word-by-9-bit. This synchronous SRAM integrates input registers, high speed SRAM and output registers onto a single monolithic IC. All input signals are latched at the positive edge of an external clock (CLK). The RAM data from the previous cycle is presented at the positive edge of the subsequent clock cycle. Write operation is initiated by the positive edge of CLK and is internally self-timed. This CXK77920TM-11 feature eliminates complex off-chip write pulse generation and provides increased flexibility for incoming signals. 90MHz operation is obtained from a single 5V power supply.