Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910ATM/AYM-12 12.5ns 80MHz• Fast clock to data valid CXK77910ATM/AYM-10 5.5ns CXK77910ATM/AYM-12 6.5ns• High speed, low power consumption• Single +5V power supply: 5V ± 5%• Separate...
CXK77910AYM: Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910ATM/AYM-12 12.5ns 80MHz• Fast clock to data valid CXK77910ATM/AYM-10 5.5ns CXK77910ATM/AYM-12 6....
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Features: • Fast cycle time: (Cycle) (Frequency) CXK77910ATM/AYM-10 10.0ns 100MHz CXK77910AT...
Features: • Fast cycle time: (Cycle) (Frequency) CXK77920TM/YM-11 11.0ns 90MHz CXK77920TM/YM...
Features: • Fast cycle time: (Cycle) (Frequency) CXK77920TM/YM-11 11.0ns 90MHz CXK77920TM/YM...
Item |
Symbol |
Rating |
Unit |
Supply voltage |
VCC |
0.5 to +7.0 |
V |
Input voltage |
VIN |
0.5 to VCC +0.5 |
V |
Output voltage |
VO |
0.5 to VCC +0.5 |
V |
Allowable power dissipation |
PD |
1 |
W |
Operating temperature |
Topr |
0 to 70 |
|
Storage temperature |
Tstg |
55 to +150 |
|
Soldering temperature • time |
Tsolder |
235 • 10 |
• sec |
The CXK77910AYM are high-speed CMOS synchronous static RAMs with common I/O pins, organized as 131,072-word-by-9-bit. These synchronous SRAMs integrate input registers, high speed SRAM and output registers onto a single monolithic IC. All input signals are latched at the positive edge of an external clock (CLK). The RAM data from the previous cycle is presented at the positive edge of the subsequent clock cycle. Write operation is initiated by the positive edge of CLK and is internally self-timed. This feature eliminates complex off-chip write pulse generation and provides increased flexibility for incoming signals. 100MHz operation CXK77910AYM is obtained from a single 5V power supply.